PART |
Description |
Maker |
AKD4563A AK4563A AK4563AVF |
16bit 4AD/2DA APGA/ALC 3V Low Power 16bit 4ch ADC & 2ch DAC with ALC
|
AKM Asahi Kasei Microsystems
|
AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MN102H73K MN102H73G MN102H730F MN102H73 MN102H730 |
Microcomputer - 16bit - General Purpose With main clock operated 58 ns (at 3.0 V to 3.6 V, 34 MHz) With main clock operated 58 ns (at 3.0 V to 3.6 V 34 MHz)
|
PANASONIC[Panasonic Semiconductor] Panasonic Corporation
|
2SB1709 |
Genera purpose amplification(−12V −1.5A)
|
ROHM
|
UPD17016GF-XXX-3B9 UPD17017GF-XXX-3B9 |
DTS 4B microcomputer with on-chip ROM (3836x16) & RAM (320x4) Digital tuning 4-bit SC microcomputer 17K series
|
NEC
|
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode 50ns 1M x 16bit CMOS dynamic ram with EDO page mode 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
UPD750008 UPD750008CUA-XXX UPD750008CU-XXX UPD7500 |
75XL series 4B-pin microcomputer on-chip ROM (8Kx8) & RAM(512x4) 4-bit single-chip microcomputer
|
NEC
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|